1N4006G-T Priser (USD) [1383862stk Lager]
- 1 pcs$0.02673
- 5,000 pcs$0.02428
- 10,000 pcs$0.02158
- 25,000 pcs$0.02023
- 50,000 pcs$0.01794
- Delnummer:
- 1N4006G-T
- Produsent:
- Diodes Incorporated
- Detaljert beskrivelse:
- DIODE GEN PURP 800V 1A DO41. Rectifiers 1.0A 800V
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Transistorer - FET, MOSFET - En, Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Power Driver-moduler, Transistorer - spesialformål, Transistorer - FET, MOSFET - Arrays and Transistorer - Bipolar (BJT) - Singel ...
- Konkurransefordel:
- We specialize in Diodes Incorporated 1N4006G-T electronic components. 1N4006G-T can be shipped within 24 hours after order. If you have any demands for 1N4006G-T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N4006G-T Produktegenskaper
Delnummer :
1N4006G-T
Produsent :
Diodes Incorporated
Beskrivelse :
DIODE GEN PURP 800V 1A DO41
Serie :
-
Delstatus :
Active
Diodetype :
Standard
Spenning - DC Reverse (Vr) (Max) :
800V
Nåværende - Gjennomsnittlig rettet (Io) :
1A
Spenning - Fremover (Vf) (Maks) @ Hvis :
1V @ 1A
Hastighet :
Standard Recovery >500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) :
2µs
Nåværende - Omvendt lekkasje @ Vr :
5µA @ 800V
Capacitance @ Vr, F :
8pF @ 4V, 1MHz
Monteringstype :
Through Hole
Pakke / sak :
DO-204AL, DO-41, Axial
Leverandørenhetspakke :
DO-41
Driftstemperatur - veikryss :
-65°C ~ 175°C
Siste nytt
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