Vishay Semiconductor Diodes Division - RGF1BHE3/67A

KEY Part #: K6457444

RGF1BHE3/67A Priser (USD) [506068stk Lager]

  • 1 pcs$0.07309
  • 6,000 pcs$0.06624

Delnummer:
RGF1BHE3/67A
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
DIODE GEN PURP 100V 1A DO214BA. Diodes - General Purpose, Power, Switching 1 Amp 100 Volt 150ns 30 Amp IFSM
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - Arrays, Transistorer - JFET-er, Dioder - Zener - Singel, Transistorer - FET, MOSFET - En, Dioder - likerettere - matriser, Tyristorer - SCR-er - moduler, Transistorer - FET, MOSFET - RF and Transistorer - Bipolar (BJT) - Singel ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division RGF1BHE3/67A electronic components. RGF1BHE3/67A can be shipped within 24 hours after order. If you have any demands for RGF1BHE3/67A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGF1BHE3/67A Produktegenskaper

Delnummer : RGF1BHE3/67A
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 100V 1A DO214BA
Serie : SUPERECTIFIER®
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 100V
Nåværende - Gjennomsnittlig rettet (Io) : 1A
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.3V @ 1A
Hastighet : Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 150ns
Nåværende - Omvendt lekkasje @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 8.5pF @ 4V, 1MHz
Monteringstype : Surface Mount
Pakke / sak : DO-214BA
Leverandørenhetspakke : DO-214BA (GF1)
Driftstemperatur - veikryss : -65°C ~ 175°C

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