TK9A90E,S4X Priser (USD) [42125stk Lager]
- 1 pcs$1.02016
- 50 pcs$0.82207
- 100 pcs$0.73987
- 500 pcs$0.57546
- 1,000 pcs$0.47681
- Delnummer:
- TK9A90E,S4X
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 900V TO220SIS.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Power Driver-moduler, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - Arrays, Transistorer - programmerbar enhet, Transistorer - IGBT-er - moduler, Tyristorer - TRIAC, Dioder - likerettere - singel and Dioder - Zener - Singel ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK9A90E,S4X electronic components. TK9A90E,S4X can be shipped within 24 hours after order. If you have any demands for TK9A90E,S4X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK9A90E,S4X Produktegenskaper
Delnummer :
TK9A90E,S4X
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 900V TO220SIS
Serie :
π-MOSVIII
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
900V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1.3 Ohm @ 4.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 900µA
Gate Lading (Qg) (Max) @ Vgs :
46nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2000pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
50W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220SIS
Pakke / sak :
TO-220-3 Full Pack
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