SPD04P10PGBTMA1 Priser (USD) [285187stk Lager]
- 1 pcs$0.12970
- 2,500 pcs$0.12452
- Delnummer:
- SPD04P10PGBTMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET P-CH 100V 4A TO252-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Power Driver-moduler, Dioder - Zener - Arrays, Transistorer - FET, MOSFET - Arrays, Tyristorer - SCR-er - moduler, Dioder - likerettere - matriser, Dioder - Bridge likerettere, Transistorer - Bipolar (BJT) - Arrays and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in Infineon Technologies SPD04P10PGBTMA1 electronic components. SPD04P10PGBTMA1 can be shipped within 24 hours after order. If you have any demands for SPD04P10PGBTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPD04P10PGBTMA1 Produktegenskaper
Delnummer :
SPD04P10PGBTMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET P-CH 100V 4A TO252-3
Serie :
SIPMOS®
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1 Ohm @ 2.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 380µA
Gate Lading (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
319pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
38W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO252-3
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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