IRF9Z24NPBF Priser (USD) [60335stk Lager]
- 1 pcs$0.62297
- 10 pcs$0.55273
- 100 pcs$0.43675
- 500 pcs$0.32039
- 1,000 pcs$0.25294
- Delnummer:
- IRF9Z24NPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET P-CH 55V 12A TO-220AB.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Transistorer - FET, MOSFET - Arrays, Power Driver-moduler, Transistorer - IGBT-er - Arrays, Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - RF, Transistorer - spesialformål and Transistorer - JFET-er ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF9Z24NPBF electronic components. IRF9Z24NPBF can be shipped within 24 hours after order. If you have any demands for IRF9Z24NPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF9Z24NPBF Produktegenskaper
Delnummer :
IRF9Z24NPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET P-CH 55V 12A TO-220AB
Serie :
HEXFET®
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
55V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
175 mOhm @ 7.2A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
45W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220AB
Pakke / sak :
TO-220-3
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