Toshiba Semiconductor and Storage - RN1318(TE85L,F)

KEY Part #: K6526309

RN1318(TE85L,F) Priser (USD) [1936260stk Lager]

  • 1 pcs$0.01920
  • 3,000 pcs$0.01910
  • 6,000 pcs$0.01661
  • 15,000 pcs$0.01412
  • 30,000 pcs$0.01329
  • 75,000 pcs$0.01246
  • 150,000 pcs$0.01107

Delnummer:
RN1318(TE85L,F)
Produsent:
Toshiba Semiconductor and Storage
Detaljert beskrivelse:
TRANS PREBIAS NPN 0.1W USM.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - spesialformål, Transistorer - IGBT-er - Arrays, Transistorer - FET, MOSFET - Arrays, Transistorer - FET, MOSFET - RF, Power Driver-moduler, Tyristorer - TRIAC, Transistorer - JFET-er and Transistorer - IGBT-er - moduler ...
Konkurransefordel:
We specialize in Toshiba Semiconductor and Storage RN1318(TE85L,F) electronic components. RN1318(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN1318(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN1318(TE85L,F) Produktegenskaper

Delnummer : RN1318(TE85L,F)
Produsent : Toshiba Semiconductor and Storage
Beskrivelse : TRANS PREBIAS NPN 0.1W USM
Serie : -
Delstatus : Active
Transistortype : NPN - Pre-Biased
Nåværende - Samler (Ic) (Maks) : 100mA
Spenning - Samlebrenningens nedbrytning (maks) : 50V
Motstand - base (R1) : 47 kOhms
Motstand - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Nåværende - Collector Cutoff (Max) : 500nA
Frekvens - overgang : 250MHz
Kraft - Maks : 100mW
Monteringstype : Surface Mount
Pakke / sak : SC-70, SOT-323
Leverandørenhetspakke : USM

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