BSC046N10NS3GATMA1 Priser (USD) [66037stk Lager]
- 1 pcs$0.65996
- 5,000 pcs$0.65668
- Delnummer:
- BSC046N10NS3GATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 100V 100A TDSON-8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - likerettere - singel, Transistorer - JFET-er, Transistorer - Bipolar (BJT) - Arrays, Power Driver-moduler, Dioder - likerettere - matriser, Transistorer - programmerbar enhet and Transistorer - FET, MOSFET - En ...
- Konkurransefordel:
- We specialize in Infineon Technologies BSC046N10NS3GATMA1 electronic components. BSC046N10NS3GATMA1 can be shipped within 24 hours after order. If you have any demands for BSC046N10NS3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC046N10NS3GATMA1 Produktegenskaper
Delnummer :
BSC046N10NS3GATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 100V 100A TDSON-8
Serie :
OptiMOS™
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
17A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, vgs :
4.6 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 120µA
Gate Lading (Qg) (Max) @ Vgs :
63nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
156W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TDSON-8
Pakke / sak :
8-PowerTDFN
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