SI4431BDY-T1-GE3 Priser (USD) [178202stk Lager]
- 1 pcs$0.20756
- 2,500 pcs$0.19490
- Delnummer:
- SI4431BDY-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET P-CH 30V 5.7A 8SOIC.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - programmerbar enhet, Tyristorer - DIAC, SIDAC, Transistorer - IGBT-er - moduler, Power Driver-moduler, Transistorer - IGBT-er - Arrays, Dioder - Zener - Arrays, Dioder - likerettere - matriser and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SI4431BDY-T1-GE3 electronic components. SI4431BDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4431BDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4431BDY-T1-GE3 Produktegenskaper
Delnummer :
SI4431BDY-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET P-CH 30V 5.7A 8SOIC
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
30 mOhm @ 7.5A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
20nC @ 5V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
-
FET-funksjon :
-
Effektdissipasjon (maks) :
1.5W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-SO
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
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