Toshiba Semiconductor and Storage - MT3S111P(TE12L,F)

KEY Part #: K6462978

MT3S111P(TE12L,F) Priser (USD) [244499stk Lager]

  • 1 pcs$0.15128

Delnummer:
MT3S111P(TE12L,F)
Produsent:
Toshiba Semiconductor and Storage
Detaljert beskrivelse:
RF TRANS NPN 6V 8GHZ PW-MINI.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Transistorer - IGBT-er - moduler, Tyristorer - SCR, Tyristorer - SCR-er - moduler, Dioder - RF, Transistorer - FET, MOSFET - Arrays, Transistorer - Bipolar (BJT) - Arrays, pre-partisk and Dioder - likerettere - singel ...
Konkurransefordel:
We specialize in Toshiba Semiconductor and Storage MT3S111P(TE12L,F) electronic components. MT3S111P(TE12L,F) can be shipped within 24 hours after order. If you have any demands for MT3S111P(TE12L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MT3S111P(TE12L,F) Produktegenskaper

Delnummer : MT3S111P(TE12L,F)
Produsent : Toshiba Semiconductor and Storage
Beskrivelse : RF TRANS NPN 6V 8GHZ PW-MINI
Serie : -
Delstatus : Active
Transistortype : NPN
Spenning - Samlebrenningens nedbrytning (maks) : 6V
Frekvens - overgang : 8GHz
Støyfigur (dB Typ @ f) : 1.25dB @ 1GHz
Gevinst : 10.5dB
Kraft - Maks : 1W
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 30mA, 5V
Nåværende - Samler (Ic) (Maks) : 100mA
Driftstemperatur : 150°C (TJ)
Monteringstype : Surface Mount
Pakke / sak : TO-243AA
Leverandørenhetspakke : PW-MINI

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