RN1910FE,LF(CT Priser (USD) [1936260stk Lager]
- 1 pcs$0.01920
- 4,000 pcs$0.01910
- 8,000 pcs$0.01661
- 12,000 pcs$0.01412
- 28,000 pcs$0.01329
- 100,000 pcs$0.01107
- Delnummer:
- RN1910FE,LF(CT
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- TRANS 2NPN PREBIAS 0.1W ES6.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - DIAC, SIDAC, Transistorer - JFET-er, Dioder - likerettere - matriser, Transistorer - IGBT-er - moduler, Dioder - Zener - Arrays, Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - Singel and Transistorer - spesialformål ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage RN1910FE,LF(CT electronic components. RN1910FE,LF(CT can be shipped within 24 hours after order. If you have any demands for RN1910FE,LF(CT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1910FE,LF(CT Produktegenskaper
Delnummer :
RN1910FE,LF(CT
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
TRANS 2NPN PREBIAS 0.1W ES6
Serie :
-
Delstatus :
Active
Transistortype :
2 NPN - Pre-Biased (Dual)
Nåværende - Samler (Ic) (Maks) :
100mA
Spenning - Samlebrenningens nedbrytning (maks) :
50V
Motstand - base (R1) :
4.7 kOhms
Motstand - Emitter Base (R2) :
-
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Nåværende - Collector Cutoff (Max) :
100nA (ICBO)
Frekvens - overgang :
250MHz
Kraft - Maks :
100mW
Monteringstype :
Surface Mount
Pakke / sak :
SOT-563, SOT-666
Leverandørenhetspakke :
ES6
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