DMN3730UFB4-7B Priser (USD) [1432838stk Lager]
- 1 pcs$0.02581
- Delnummer:
- DMN3730UFB4-7B
- Produsent:
- Diodes Incorporated
- Detaljert beskrivelse:
- MOSFET BVDSS 25V-30V X1-DFN1006.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - Singel, Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Dioder - likerettere - singel, Transistorer - Bipolar (BJT) - RF, Transistorer - FET, MOSFET - RF and Power Driver-moduler ...
- Konkurransefordel:
- We specialize in Diodes Incorporated DMN3730UFB4-7B electronic components. DMN3730UFB4-7B can be shipped within 24 hours after order. If you have any demands for DMN3730UFB4-7B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3730UFB4-7B Produktegenskaper
Delnummer :
DMN3730UFB4-7B
Produsent :
Diodes Incorporated
Beskrivelse :
MOSFET BVDSS 25V-30V X1-DFN1006
Serie :
Automotive, AEC-Q101
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, vgs :
460 mOhm @ 200mA, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
1.6nC @ 4.5V
Vgs (maks) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
64.3pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
470mW (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
X2-DFN1006-3
Pakke / sak :
3-XFDFN
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