Microsemi Corporation - JANTX1N6312US

KEY Part #: K6479710

JANTX1N6312US Priser (USD) [279stk Lager]

  • 1 pcs$158.60680
  • 10 pcs$150.94992
  • 50 pcs$145.48072
  • 100 pcs$142.19920
  • 250 pcs$140.01152
  • 500 pcs$136.73000
  • 1,000 pcs$131.26080

Delnummer:
JANTX1N6312US
Produsent:
Microsemi Corporation
Detaljert beskrivelse:
DIODE ZENER 3.3V 500MW B-SQ MELF. Zener Diodes Zener Diodes
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Dioder - RF, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - Bipolar (BJT) - Arrays, Tyristorer - DIAC, SIDAC, Dioder - likerettere - matriser, Dioder - Zener - Singel and Transistorer - IGBT-er - Arrays ...
Konkurransefordel:
We specialize in Microsemi Corporation JANTX1N6312US electronic components. JANTX1N6312US can be shipped within 24 hours after order. If you have any demands for JANTX1N6312US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JANTX1N6312US Produktegenskaper

Delnummer : JANTX1N6312US
Produsent : Microsemi Corporation
Beskrivelse : DIODE ZENER 3.3V 500MW B-SQ MELF
Serie : Military, MIL-PRF-19500/533
Delstatus : Active
Spenning - Zener (Nom) (Vz) : 3.3V
Toleranse : ±5%
Kraft - Maks : 500mW
Impedans (maks) (Zzt) : 27 Ohms
Nåværende - Omvendt lekkasje @ Vr : 5µA @ 1V
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.4V @ 1A
Driftstemperatur : -65°C ~ 175°C
Monteringstype : Surface Mount
Pakke / sak : SQ-MELF, B
Leverandørenhetspakke : B, SQ-MELF

Du kan også være interessert i
  • BAW156E6327HTSA1

    Infineon Technologies

    DIODE ARRAY GP 80V 200MA SOT23. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • MMBD1705A

    ON Semiconductor

    DIODE ARRAY GP 30V 50MA SOT23-3.

  • SMBD7000E6327HTSA1

    Infineon Technologies

    DIODE ARRAY GP 100V 200MA SOT23. Diodes - General Purpose, Power, Switching AF DIODE 100V 0.2A

  • 1SS181,LF

    Toshiba Semiconductor and Storage

    DIODE ARRAY GP 80V 100MA SC59. Diodes - General Purpose, Power, Switching Hi Spd Switch Diode 0.1A 80V VR

  • BAV170E6433HTMA1

    Infineon Technologies

    DIODE ARRAY GP 80V 200MA SOT23. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode Array

  • BAV70E6433HTMA1

    Infineon Technologies

    DIODE ARRAY GP 80V 200MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode 200mA