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- Delnummer:
- TPC8113(TE12L,Q)
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET P-CH 30V 11A SOP8 2-6J1B.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - RF, Transistorer - IGBT-er - Arrays, Tyristorer - TRIAC, Dioder - Zener - Arrays, Transistorer - FET, MOSFET - RF, Transistorer - JFET-er and Tyristorer - SCR-er - moduler ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TPC8113(TE12L,Q) electronic components. TPC8113(TE12L,Q) can be shipped within 24 hours after order. If you have any demands for TPC8113(TE12L,Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC8113(TE12L,Q) Produktegenskaper
Delnummer :
TPC8113(TE12L,Q)
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET P-CH 30V 11A SOP8 2-6J1B
Serie :
-
Delstatus :
Obsolete
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, vgs :
10 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id :
2V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
107nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
1W (Ta)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-SOP (5.5x6.0)
Pakke / sak :
8-SOIC (0.173", 4.40mm Width)
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