FQB50N06TM Priser (USD) [144409stk Lager]
- 1 pcs$0.34831
- 800 pcs$0.34658
- Delnummer:
- FQB50N06TM
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 60V 50A D2PAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - likerettere - matriser, Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Tyristorer - SCR-er - moduler, Transistorer - FET, MOSFET - Arrays, Dioder - Zener - Singel, Dioder - RF and Dioder - Zener - Arrays ...
- Konkurransefordel:
- We specialize in ON Semiconductor FQB50N06TM electronic components. FQB50N06TM can be shipped within 24 hours after order. If you have any demands for FQB50N06TM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQB50N06TM Produktegenskaper
Delnummer :
FQB50N06TM
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 60V 50A D2PAK
Serie :
QFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
22 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (maks) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
1540pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
3.75W (Ta), 120W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D²PAK (TO-263AB)
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Siste nytt
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