HERF1007GAHC0G Priser (USD) [90796stk Lager]
- 1 pcs$0.43064
- Delnummer:
- HERF1007GAHC0G
- Produsent:
- Taiwan Semiconductor Corporation
- Detaljert beskrivelse:
- DIODE HIGH EFFICIENT. Rectifiers 10A,800V, G.P. HIGH EFFICIENT DUAL RECTIFIER, ISOLATED
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Dioder - likerettere - matriser, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - FET, MOSFET - RF, Dioder - RF, Dioder - Zener - Arrays and Tyristorer - SCR-er - moduler ...
- Konkurransefordel:
- We specialize in Taiwan Semiconductor Corporation HERF1007GAHC0G electronic components. HERF1007GAHC0G can be shipped within 24 hours after order. If you have any demands for HERF1007GAHC0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HERF1007GAHC0G Produktegenskaper
Delnummer :
HERF1007GAHC0G
Produsent :
Taiwan Semiconductor Corporation
Beskrivelse :
DIODE HIGH EFFICIENT
Serie :
Automotive, AEC-Q101
Delstatus :
Active
Diodetype :
Standard
Spenning - DC Reverse (Vr) (Max) :
800V
Nåværende - Gjennomsnittlig rettet (Io) :
10A
Spenning - Fremover (Vf) (Maks) @ Hvis :
1.7V @ 5A
Hastighet :
Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) :
80ns
Nåværende - Omvendt lekkasje @ Vr :
10µA @ 800V
Capacitance @ Vr, F :
40pF @ 4V, 1MHz
Monteringstype :
Through Hole
Pakke / sak :
TO-220-3 Full Pack, Isolated Tab
Leverandørenhetspakke :
ITO-220AB
Driftstemperatur - veikryss :
-55°C ~ 150°C
Siste nytt
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