SIB441EDK-T1-GE3 Priser (USD) [518123stk Lager]
- 1 pcs$0.07139
- 3,000 pcs$0.06743
- Delnummer:
- SIB441EDK-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET P-CH 12V 9A PPAK SC75-6L.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - Arrays, Tyristorer - SCR, Transistorer - Bipolar (BJT) - Arrays, Dioder - likerettere - singel, Dioder - Zener - Arrays, Transistorer - IGBT-er - singel, Transistorer - FET, MOSFET - En and Transistorer - Bipolar (BJT) - RF ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SIB441EDK-T1-GE3 electronic components. SIB441EDK-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIB441EDK-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIB441EDK-T1-GE3 Produktegenskaper
Delnummer :
SIB441EDK-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET P-CH 12V 9A PPAK SC75-6L
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
12V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, vgs :
25.5 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
33nC @ 8V
Vgs (maks) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
1180pF @ 6V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.4W (Ta), 13W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PowerPAK® SC-75-6L Single
Pakke / sak :
PowerPAK® SC-75-6L
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