Vishay Semiconductor Diodes Division - UG12JT-E3/45

KEY Part #: K6441280

UG12JT-E3/45 Priser (USD) [51954stk Lager]

  • 1 pcs$0.73167
  • 10 pcs$0.65684
  • 25 pcs$0.61979
  • 100 pcs$0.52806
  • 250 pcs$0.49582
  • 500 pcs$0.43384
  • 1,000 pcs$0.34004
  • 2,500 pcs$0.31658
  • 5,000 pcs$0.31267

Delnummer:
UG12JT-E3/45
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
DIODE GEN PURP 600V 12A TO220AC.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - likerettere - matriser, Transistorer - FET, MOSFET - RF, Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Tyristorer - SCR, Transistorer - IGBT-er - singel, Transistorer - FET, MOSFET - En and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division UG12JT-E3/45 electronic components. UG12JT-E3/45 can be shipped within 24 hours after order. If you have any demands for UG12JT-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UG12JT-E3/45 Produktegenskaper

Delnummer : UG12JT-E3/45
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 600V 12A TO220AC
Serie : -
Delstatus : Obsolete
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 600V
Nåværende - Gjennomsnittlig rettet (Io) : 12A
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.75V @ 12A
Hastighet : Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 50ns
Nåværende - Omvendt lekkasje @ Vr : 30µA @ 600V
Capacitance @ Vr, F : -
Monteringstype : Through Hole
Pakke / sak : TO-220-2
Leverandørenhetspakke : TO-220AC
Driftstemperatur - veikryss : 150°C (Max)

Du kan også være interessert i
  • VS-HFA04SD60S-M3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 4A TO252AA. Diodes - General Purpose, Power, Switching 4A 600V Ultrafast 17ns HEXFRED

  • VS-EPH3006LHN3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 30A TO247AD. Rectifiers 600V 30A FRED Pt TO-247 LL 2L

  • VS-E4PU6006LHN3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 60A TO247AD. Rectifiers 600V 60A FRED Pt TO-247 LL 2L

  • SFA808G C0G

    Taiwan Semiconductor Corporation

    DIODE GEN PURP 600V 8A TO220AC. Rectifiers 35ns8A 600V Sp Fst Recov Rectifier

  • STTH3010PI

    STMicroelectronics

    DIODE GEN PURP 1KV 30A DOP3I. Diodes - General Purpose, Power, Switching high voltage diode

  • FERD30SM100ST

    STMicroelectronics

    DIODE RECT 100V 30A TO220AB. Rectifiers Field Effect Rectifier