IDP08E65D2XKSA1 Priser (USD) [59949stk Lager]
- 1 pcs$0.44737
- 10 pcs$0.39887
- 100 pcs$0.29417
- 500 pcs$0.24302
- 1,000 pcs$0.19186
- Delnummer:
- IDP08E65D2XKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- DIODE GEN PURP 650V 8A TO220-2. Diodes - General Purpose, Power, Switching IGBT PRODUCTS
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Singel, Tyristorer - SCR-er - moduler, Transistorer - FET, MOSFET - RF, Dioder - RF, Dioder - Zener - Singel, Transistorer - Bipolar (BJT) - Arrays, pre-partisk and Dioder - Variabel kapasitet (Varicaps, Varactors) ...
- Konkurransefordel:
- We specialize in Infineon Technologies IDP08E65D2XKSA1 electronic components. IDP08E65D2XKSA1 can be shipped within 24 hours after order. If you have any demands for IDP08E65D2XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDP08E65D2XKSA1 Produktegenskaper
Delnummer :
IDP08E65D2XKSA1
Produsent :
Infineon Technologies
Beskrivelse :
DIODE GEN PURP 650V 8A TO220-2
Serie :
-
Delstatus :
Active
Diodetype :
Standard
Spenning - DC Reverse (Vr) (Max) :
650V
Nåværende - Gjennomsnittlig rettet (Io) :
8A
Spenning - Fremover (Vf) (Maks) @ Hvis :
2.3V @ 3A
Hastighet :
Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) :
40ns
Nåværende - Omvendt lekkasje @ Vr :
40µA @ 650V
Capacitance @ Vr, F :
-
Monteringstype :
Through Hole
Pakke / sak :
TO-220-2
Leverandørenhetspakke :
TO-220-2
Driftstemperatur - veikryss :
-40°C ~ 175°C
Siste nytt
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