SI9945BDY-T1-GE3 Priser (USD) [230950stk Lager]
- 1 pcs$0.16015
- 2,500 pcs$0.13562
- Delnummer:
- SI9945BDY-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET 2N-CH 60V 5.3A 8-SOIC.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - Arrays, Transistorer - Bipolar (BJT) - RF, Transistorer - IGBT-er - Arrays, Transistorer - IGBT-er - singel, Transistorer - FET, MOSFET - En, Transistorer - programmerbar enhet and Transistorer - Bipolar (BJT) - Singel ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SI9945BDY-T1-GE3 electronic components. SI9945BDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI9945BDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI9945BDY-T1-GE3 Produktegenskaper
Delnummer :
SI9945BDY-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET 2N-CH 60V 5.3A 8-SOIC
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5.3A
Rds On (Max) @ Id, vgs :
58 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
665pF @ 15V
Kraft - Maks :
3.1W
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
Leverandørenhetspakke :
8-SO
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