Murata Electronics North America - NFM21PC104R1E3D

KEY Part #: K7359525

NFM21PC104R1E3D Priser (USD) [1022539stk Lager]

  • 1 pcs$0.03635
  • 4,000 pcs$0.03617
  • 8,000 pcs$0.03404
  • 12,000 pcs$0.03192
  • 28,000 pcs$0.02979

Delnummer:
NFM21PC104R1E3D
Produsent:
Murata Electronics North America
Detaljert beskrivelse:
CAP FEEDTHRU 0.1UF 20 25V 0805. Feed Through Capacitors 100KPF 25V 2.0A EMI
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Mat gjennom kondensatorer, SAW-filtre, Keramiske filtre, Helical Filters, DSL-filtre, Kraftlinjefiltermoduler, Monolitiske krystaller and Vanlig modus kvalt ...
Konkurransefordel:
We specialize in Murata Electronics North America NFM21PC104R1E3D electronic components. NFM21PC104R1E3D can be shipped within 24 hours after order. If you have any demands for NFM21PC104R1E3D, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NFM21PC104R1E3D Produktegenskaper

Delnummer : NFM21PC104R1E3D
Produsent : Murata Electronics North America
Beskrivelse : CAP FEEDTHRU 0.1UF 20 25V 0805
Serie : EMIFIL®, NFM21
Delstatus : Active
kapasitans : 0.1µF
Toleranse : ±20%
Spenning - vurdert : 25V
Nåværende : 2A
DC Resistance (DCR) (Max) : 30 mOhm
Driftstemperatur : -55°C ~ 125°C
Innsettelsestap : -
Temperaturkoeffisient : -
rangeringer : -
Monteringstype : Surface Mount
Pakke / sak : 0805 (2012 Metric), 3 PC Pad
Størrelse / dimensjon : 0.079" L x 0.049" W (2.00mm x 1.25mm)
Høyde (maks) : 0.037" (0.95mm)
Trådstørrelse : -

Du kan også være interessert i
  • K4A4G085WE-BIRC

    Samsung Semiconductor

    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

  • K4ABG165WA-MCWE

    Samsung Semiconductor

    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

  • K4A4G085WE-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

  • K4A4G085WF-BCTD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

  • K4A4G085WF-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

  • K4A4G165WE-BCWE

    Samsung Semiconductor

    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.