RN2706JE(TE85L,F) Priser (USD) [2064stk Lager]
- 1 pcs$0.11469
- 10 pcs$0.10362
- 25 pcs$0.07451
- 100 pcs$0.05798
- Delnummer:
- RN2706JE(TE85L,F)
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- TRANS 2PNP PREBIAS 0.1W ESV.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - singel, Dioder - Zener - Arrays, Transistorer - programmerbar enhet, Tyristorer - SCR-er - moduler, Dioder - Bridge likerettere, Tyristorer - SCR, Transistorer - Bipolar (BJT) - Singel and Power Driver-moduler ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage RN2706JE(TE85L,F) electronic components. RN2706JE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2706JE(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN2706JE(TE85L,F) Produktegenskaper
Delnummer :
RN2706JE(TE85L,F)
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
TRANS 2PNP PREBIAS 0.1W ESV
Serie :
-
Delstatus :
Discontinued at Digi-Key
Transistortype :
2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Nåværende - Samler (Ic) (Maks) :
100mA
Spenning - Samlebrenningens nedbrytning (maks) :
50V
Motstand - base (R1) :
4.7 kOhms
Motstand - Emitter Base (R2) :
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Nåværende - Collector Cutoff (Max) :
100nA (ICBO)
Frekvens - overgang :
200MHz
Kraft - Maks :
100mW
Monteringstype :
Surface Mount
Pakke / sak :
SOT-553
Leverandørenhetspakke :
ESV
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