TSM120N06LCR RLG Priser (USD) [378506stk Lager]
- 1 pcs$0.09772
- Delnummer:
- TSM120N06LCR RLG
- Produsent:
- Taiwan Semiconductor Corporation
- Detaljert beskrivelse:
- MOSFET N-CH 60V 54A 8PDFN.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Tyristorer - DIAC, SIDAC, Tyristorer - SCR, Dioder - Bridge likerettere, Transistorer - FET, MOSFET - En, Dioder - Zener - Singel, Tyristorer - SCR-er - moduler and Transistorer - spesialformål ...
- Konkurransefordel:
- We specialize in Taiwan Semiconductor Corporation TSM120N06LCR RLG electronic components. TSM120N06LCR RLG can be shipped within 24 hours after order. If you have any demands for TSM120N06LCR RLG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM120N06LCR RLG Produktegenskaper
Delnummer :
TSM120N06LCR RLG
Produsent :
Taiwan Semiconductor Corporation
Beskrivelse :
MOSFET N-CH 60V 54A 8PDFN
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
12 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
36.5nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2116pF @ 30V
FET-funksjon :
-
Effektdissipasjon (maks) :
69W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-PDFN (5x6)
Pakke / sak :
8-PowerTDFN
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