Taiwan Semiconductor Corporation - TSM120N06LCR RLG

KEY Part #: K6396509

TSM120N06LCR RLG Priser (USD) [378506stk Lager]

1 pcs$0.09772

Delnummer:: TSM120N06LCR RLG

Produsent:: Taiwan Semiconductor Corporation

Detaljert beskrivelse:: MOSFET N-CH 60V 54A 8PDFN.

Manufacturer's standard lead time:: På lager

Holdbarhet:: Ett år

Brikke fra:: Hong Kong

RoHS:

Betalingsmetode:

Forsendelsesmåte:

Familiekategorier:: KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR, Power Driver-moduler, Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - IGBT-er - Arrays, Transistorer - FET, MOSFET - Arrays, Tyristorer - SCR-er - moduler and Tyristorer - TRIAC ...

Konkurransefordel:: We specialize in Taiwan Semiconductor Corporation TSM120N06LCR RLG electronic components. TSM120N06LCR RLG can be shipped within 24 hours after order. If you have any demands for TSM120N06LCR RLG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

TSM120N06LCR RLG Produktegenskaper

Delnummer : TSM120N06LCR RLG

Produsent : Taiwan Semiconductor Corporation

Beskrivelse : MOSFET N-CH 60V 54A 8PDFN

Serie : -

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 60V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 54A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 12 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 36.5nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2116pF @ 30V

FET-funksjon : -

Effektdissipasjon (maks) : 69W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : 8-PDFN (5x6)

Pakke / sak : 8-PowerTDFN

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