Toshiba Semiconductor and Storage - RN2606(TE85L,F)

KEY Part #: K6529154

RN2606(TE85L,F) Priser (USD) [1060332stk Lager]

  • 1 pcs$0.03488

Delnummer:
RN2606(TE85L,F)
Produsent:
Toshiba Semiconductor and Storage
Detaljert beskrivelse:
TRANS 2PNP PREBIAS 0.3W SM6.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - Arrays, Transistorer - spesialformål, Transistorer - IGBT-er - singel, Dioder - Zener - Singel, Dioder - Bridge likerettere, Tyristorer - SCR-er - moduler, Transistorer - FET, MOSFET - RF and Dioder - Variabel kapasitet (Varicaps, Varactors) ...
Konkurransefordel:
We specialize in Toshiba Semiconductor and Storage RN2606(TE85L,F) electronic components. RN2606(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2606(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN2606(TE85L,F) Produktegenskaper

Delnummer : RN2606(TE85L,F)
Produsent : Toshiba Semiconductor and Storage
Beskrivelse : TRANS 2PNP PREBIAS 0.3W SM6
Serie : -
Delstatus : Active
Transistortype : 2 PNP - Pre-Biased (Dual)
Nåværende - Samler (Ic) (Maks) : 100mA
Spenning - Samlebrenningens nedbrytning (maks) : 50V
Motstand - base (R1) : 4.7 kOhms
Motstand - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Nåværende - Collector Cutoff (Max) : 100nA (ICBO)
Frekvens - overgang : 200MHz
Kraft - Maks : 300mW
Monteringstype : Surface Mount
Pakke / sak : SC-74, SOT-457
Leverandørenhetspakke : SM6

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