SI1032X-T1-GE3 Priser (USD) [610452stk Lager]
- 1 pcs$0.06059
- 3,000 pcs$0.05168
- Delnummer:
- SI1032X-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 20V 200MA SC89-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - En, Transistorer - programmerbar enhet, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - IGBT-er - singel, Transistorer - IGBT-er - moduler, Dioder - Bridge likerettere, Dioder - RF and Tyristorer - TRIAC ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SI1032X-T1-GE3 electronic components. SI1032X-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1032X-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1032X-T1-GE3 Produktegenskaper
Delnummer :
SI1032X-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 20V 200MA SC89-3
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, vgs :
5 Ohm @ 200mA, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
0.75nC @ 4.5V
Vgs (maks) :
±6V
Input Capacitance (Ciss) (Max) @ Vds :
-
FET-funksjon :
-
Effektdissipasjon (maks) :
300mW (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
SC-89-3
Pakke / sak :
SC-89, SOT-490
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