BSZ12DN20NS3GATMA1 Priser (USD) [179059stk Lager]
- 1 pcs$0.22347
- 5,000 pcs$0.22236
- Delnummer:
- BSZ12DN20NS3GATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 200V 11.3A 8TSDSON.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR, Transistorer - Bipolar (BJT) - RF, Transistorer - Bipolar (BJT) - Arrays, Transistorer - IGBT-er - moduler, Tyristorer - SCR-er - moduler, Tyristorer - DIAC, SIDAC, Transistorer - spesialformål and Dioder - likerettere - matriser ...
- Konkurransefordel:
- We specialize in Infineon Technologies BSZ12DN20NS3GATMA1 electronic components. BSZ12DN20NS3GATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ12DN20NS3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ12DN20NS3GATMA1 Produktegenskaper
Delnummer :
BSZ12DN20NS3GATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 200V 11.3A 8TSDSON
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
125 mOhm @ 5.7A, 10V
Vgs (th) (Max) @ Id :
4V @ 25µA
Gate Lading (Qg) (Max) @ Vgs :
8.7nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
680pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
50W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TSDSON-8
Pakke / sak :
8-PowerTDFN
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