BSS806NEH6327XTSA1 Priser (USD) [907269stk Lager]
- 1 pcs$0.04077
- 3,000 pcs$0.03385
- Delnummer:
- BSS806NEH6327XTSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 20V 2.3A SOT23.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - RF, Dioder - Variabel kapasitet (Varicaps, Varactors), Dioder - Zener - Singel, Transistorer - JFET-er, Dioder - likerettere - singel, Tyristorer - TRIAC, Transistorer - IGBT-er - singel and Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor ...
- Konkurransefordel:
- We specialize in Infineon Technologies BSS806NEH6327XTSA1 electronic components. BSS806NEH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSS806NEH6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSS806NEH6327XTSA1 Produktegenskaper
Delnummer :
BSS806NEH6327XTSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 20V 2.3A SOT23
Serie :
Automotive, AEC-Q101, HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 2.5V
Rds On (Max) @ Id, vgs :
57 mOhm @ 2.3A, 2.5V
Vgs (th) (Max) @ Id :
0.75V @ 11µA
Gate Lading (Qg) (Max) @ Vgs :
1.7nC @ 2.5V
Vgs (maks) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
529pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
500mW (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
SOT-23-3
Pakke / sak :
TO-236-3, SC-59, SOT-23-3
Siste nytt
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