Infineon Technologies - IDV08E65D2XKSA1

KEY Part #: K6440374

IDV08E65D2XKSA1 Priser (USD) [56337stk Lager]

  • 1 pcs$0.52681
  • 10 pcs$0.47120
  • 100 pcs$0.34768
  • 500 pcs$0.28720
  • 1,000 pcs$0.22674

Delnummer:
IDV08E65D2XKSA1
Produsent:
Infineon Technologies
Detaljert beskrivelse:
DIODE GEN PURP 650V 8A TO220-2. Diodes - General Purpose, Power, Switching IGBT PRODUCTS
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Tyristorer - SCR-er - moduler, Dioder - likerettere - matriser, Transistorer - IGBT-er - moduler, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Arrays, Tyristorer - TRIAC and Tyristorer - SCR ...
Konkurransefordel:
We specialize in Infineon Technologies IDV08E65D2XKSA1 electronic components. IDV08E65D2XKSA1 can be shipped within 24 hours after order. If you have any demands for IDV08E65D2XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IDV08E65D2XKSA1 Produktegenskaper

Delnummer : IDV08E65D2XKSA1
Produsent : Infineon Technologies
Beskrivelse : DIODE GEN PURP 650V 8A TO220-2
Serie : -
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 650V
Nåværende - Gjennomsnittlig rettet (Io) : 8A
Spenning - Fremover (Vf) (Maks) @ Hvis : 2.3V @ 8A
Hastighet : Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 40ns
Nåværende - Omvendt lekkasje @ Vr : 40µA @ 650V
Capacitance @ Vr, F : -
Monteringstype : Through Hole
Pakke / sak : TO-220-2
Leverandørenhetspakke : TO-220-2
Driftstemperatur - veikryss : -40°C ~ 175°C

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