DMTH6010SCT Priser (USD) [51384stk Lager]
- 1 pcs$0.72331
- 50 pcs$0.57949
- 100 pcs$0.50707
- 500 pcs$0.39322
- 1,000 pcs$0.29366
- Delnummer:
- DMTH6010SCT
- Produsent:
- Diodes Incorporated
- Detaljert beskrivelse:
- MOSFET BVDSS 41V 60VTO220-3TU.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Tyristorer - TRIAC, Transistorer - Bipolar (BJT) - Arrays, Transistorer - programmerbar enhet, Tyristorer - SCR, Transistorer - Bipolar (BJT) - Singel, Dioder - Variabel kapasitet (Varicaps, Varactors) and Transistorer - JFET-er ...
- Konkurransefordel:
- We specialize in Diodes Incorporated DMTH6010SCT electronic components. DMTH6010SCT can be shipped within 24 hours after order. If you have any demands for DMTH6010SCT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH6010SCT Produktegenskaper
Delnummer :
DMTH6010SCT
Produsent :
Diodes Incorporated
Beskrivelse :
MOSFET BVDSS 41V 60VTO220-3TU
Serie :
Automotive, AEC-Q101
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
7.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
36.3nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1940pF @ 30V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.8W (Ta), 125W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220-3
Pakke / sak :
TO-220-3
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