SCTW90N65G2V Priser (USD) [1553stk Lager]
- 1 pcs$27.86749
- Delnummer:
- SCTW90N65G2V
- Produsent:
- STMicroelectronics
- Detaljert beskrivelse:
- SILICON CARBIDE POWER MOSFET 650.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Arrays, Dioder - likerettere - matriser, Transistorer - Bipolar (BJT) - RF, Transistorer - Bipolar (BJT) - Singel, Tyristorer - SCR-er - moduler, Transistorer - FET, MOSFET - Arrays and Tyristorer - DIAC, SIDAC ...
- Konkurransefordel:
- We specialize in STMicroelectronics SCTW90N65G2V electronic components. SCTW90N65G2V can be shipped within 24 hours after order. If you have any demands for SCTW90N65G2V, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCTW90N65G2V Produktegenskaper
Delnummer :
SCTW90N65G2V
Produsent :
STMicroelectronics
Beskrivelse :
SILICON CARBIDE POWER MOSFET 650
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
SiCFET (Silicon Carbide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, vgs :
25 mOhm @ 50A, 18V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
157nC @ 18V
Vgs (maks) :
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds :
3300pF @ 400V
FET-funksjon :
-
Effektdissipasjon (maks) :
390W (Tc)
Driftstemperatur :
-55°C ~ 200°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
HiP247™
Pakke / sak :
TO-247-3
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