RJK1003DPN-E0#T2 Priser (USD) [66402stk Lager]
- 1 pcs$1.36617
- Delnummer:
- RJK1003DPN-E0#T2
- Produsent:
- Renesas Electronics America
- Detaljert beskrivelse:
- MOSFET N-CH 100V 50A TO220.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - JFET-er, Dioder - likerettere - matriser, Power Driver-moduler, Transistorer - programmerbar enhet and Transistorer - Bipolar (BJT) - RF ...
- Konkurransefordel:
- We specialize in Renesas Electronics America RJK1003DPN-E0#T2 electronic components. RJK1003DPN-E0#T2 can be shipped within 24 hours after order. If you have any demands for RJK1003DPN-E0#T2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJK1003DPN-E0#T2 Produktegenskaper
Delnummer :
RJK1003DPN-E0#T2
Produsent :
Renesas Electronics America
Beskrivelse :
MOSFET N-CH 100V 50A TO220
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
11 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
-
Gate Lading (Qg) (Max) @ Vgs :
59nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4150pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
125W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220AB
Pakke / sak :
TO-220-3
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