SIHU5N50D-GE3 Priser (USD) [78588stk Lager]
- 1 pcs$0.49754
- 3,000 pcs$0.18272
- Delnummer:
- SIHU5N50D-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 500V 5.3A TO251 IPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Transistorer - Bipolar (BJT) - RF, Transistorer - FET, MOSFET - En, Transistorer - IGBT-er - singel, Tyristorer - SCR, Transistorer - programmerbar enhet, Transistorer - IGBT-er - Arrays and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SIHU5N50D-GE3 electronic components. SIHU5N50D-GE3 can be shipped within 24 hours after order. If you have any demands for SIHU5N50D-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHU5N50D-GE3 Produktegenskaper
Delnummer :
SIHU5N50D-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 500V 5.3A TO251 IPAK
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
500V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1.5 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
325pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
104W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-251
Pakke / sak :
TO-251-3 Short Leads, IPak, TO-251AA
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