STW50N65DM2AG Priser (USD) [11159stk Lager]
- 1 pcs$3.45509
- 10 pcs$3.10870
- 100 pcs$2.55597
- 500 pcs$2.14148
- 1,000 pcs$1.86515
- Delnummer:
- STW50N65DM2AG
- Produsent:
- STMicroelectronics
- Detaljert beskrivelse:
- MOSFET N-CH 650V 28A.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - programmerbar enhet, Tyristorer - SCR, Transistorer - FET, MOSFET - Arrays, Transistorer - JFET-er, Transistorer - Bipolar (BJT) - RF, Tyristorer - SCR-er - moduler, Dioder - Zener - Singel and Dioder - Zener - Arrays ...
- Konkurransefordel:
- We specialize in STMicroelectronics STW50N65DM2AG electronic components. STW50N65DM2AG can be shipped within 24 hours after order. If you have any demands for STW50N65DM2AG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STW50N65DM2AG Produktegenskaper
Delnummer :
STW50N65DM2AG
Produsent :
STMicroelectronics
Beskrivelse :
MOSFET N-CH 650V 28A
Serie :
Automotive, AEC-Q101, MDmesh™ DM2
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
87 mOhm @ 19A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
70nC @ 10V
Vgs (maks) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
3200pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
300W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-247
Pakke / sak :
TO-247-3
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