Vishay Semiconductor Diodes Division - ESH1DHE3_A/H

KEY Part #: K6433860

ESH1DHE3_A/H Priser (USD) [500381stk Lager]

  • 1 pcs$0.07392
  • 3,600 pcs$0.06759

Delnummer:
ESH1DHE3_A/H
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
DIODE GEN PURP 200V 1A DO214AC. Rectifiers 200 Volt 1.0A 25ns Glass Passivated
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Power Driver-moduler, Transistorer - Bipolar (BJT) - RF, Transistorer - FET, MOSFET - Arrays, Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Singel, Dioder - RF, Transistorer - Bipolar (BJT) - Arrays, pre-partisk and Dioder - likerettere - matriser ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division ESH1DHE3_A/H electronic components. ESH1DHE3_A/H can be shipped within 24 hours after order. If you have any demands for ESH1DHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ESH1DHE3_A/H Produktegenskaper

Delnummer : ESH1DHE3_A/H
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 200V 1A DO214AC
Serie : Automotive, AEC-Q101
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 200V
Nåværende - Gjennomsnittlig rettet (Io) : 1A
Spenning - Fremover (Vf) (Maks) @ Hvis : 900mV @ 1A
Hastighet : Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 25ns
Nåværende - Omvendt lekkasje @ Vr : 1µA @ 200V
Capacitance @ Vr, F : 25pF @ 4V, 1MHz
Monteringstype : Surface Mount
Pakke / sak : DO-214AC, SMA
Leverandørenhetspakke : DO-214AC (SMA)
Driftstemperatur - veikryss : -55°C ~ 175°C

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