Vishay Semiconductor Diodes Division - FESB8DT-E3/81

KEY Part #: K6456460

FESB8DT-E3/81 Priser (USD) [117965stk Lager]

  • 1 pcs$0.31354
  • 800 pcs$0.29367

Delnummer:
FESB8DT-E3/81
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
DIODE GEN PURP 200V 8A TO263AB. Rectifiers 200 Volt 8.0A 35ns Single
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Arrays, Transistorer - spesialformål, Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - IGBT-er - singel, Dioder - RF, Transistorer - programmerbar enhet and Dioder - Bridge likerettere ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division FESB8DT-E3/81 electronic components. FESB8DT-E3/81 can be shipped within 24 hours after order. If you have any demands for FESB8DT-E3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FESB8DT-E3/81 Produktegenskaper

Delnummer : FESB8DT-E3/81
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 200V 8A TO263AB
Serie : -
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 200V
Nåværende - Gjennomsnittlig rettet (Io) : 8A
Spenning - Fremover (Vf) (Maks) @ Hvis : 950mV @ 8A
Hastighet : Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 35ns
Nåværende - Omvendt lekkasje @ Vr : 10µA @ 200V
Capacitance @ Vr, F : -
Monteringstype : Surface Mount
Pakke / sak : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Leverandørenhetspakke : TO-263AB
Driftstemperatur - veikryss : -55°C ~ 150°C

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