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- Delnummer:
- IRF6617TR1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 30V 14A DIRECTFET.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - RF, Tyristorer - SCR-er - moduler, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - FET, MOSFET - Arrays, Power Driver-moduler, Transistorer - FET, MOSFET - RF and Dioder - likerettere - singel ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF6617TR1 electronic components. IRF6617TR1 can be shipped within 24 hours after order. If you have any demands for IRF6617TR1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6617TR1 Produktegenskaper
Delnummer :
IRF6617TR1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 30V 14A DIRECTFET
Serie :
HEXFET®
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
14A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
8.1 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
17nC @ 4.5V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 15V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.1W (Ta), 42W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
DIRECTFET™ ST
Pakke / sak :
DirectFET™ Isometric ST
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