Delnummer :
BSZ0910NDXTMA1
Produsent :
Infineon Technologies
Beskrivelse :
DIFFERENTIATED MOSFETS
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Logic Level Gate, 4.5V Drive
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
9.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, vgs :
9.5 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
5.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
800pF @ 15V
Kraft - Maks :
1.9W (Ta), 31W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-PowerVDFN
Leverandørenhetspakke :
PG-WISON-8