Vishay Semiconductor Diodes Division - VS-4ESH02-M3/87A

KEY Part #: K6430847

VS-4ESH02-M3/87A Priser (USD) [492735stk Lager]

  • 1 pcs$0.07922
  • 6,500 pcs$0.07882

Delnummer:
VS-4ESH02-M3/87A
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
DIODE GEN PURP 200V 4A TO277A. Rectifiers Hypfst Rct 4A 200V
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - Arrays, Transistorer - spesialformål, Transistorer - programmerbar enhet, Power Driver-moduler, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - JFET-er and Dioder - RF ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division VS-4ESH02-M3/87A electronic components. VS-4ESH02-M3/87A can be shipped within 24 hours after order. If you have any demands for VS-4ESH02-M3/87A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-4ESH02-M3/87A Produktegenskaper

Delnummer : VS-4ESH02-M3/87A
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 200V 4A TO277A
Serie : FRED Pt®
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 200V
Nåværende - Gjennomsnittlig rettet (Io) : 4A
Spenning - Fremover (Vf) (Maks) @ Hvis : 930mV @ 4A
Hastighet : Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 25ns
Nåværende - Omvendt lekkasje @ Vr : 2µA @ 200V
Capacitance @ Vr, F : -
Monteringstype : Surface Mount
Pakke / sak : TO-277, 3-PowerDFN
Leverandørenhetspakke : TO-277A (SMPC)
Driftstemperatur - veikryss : -65°C ~ 175°C

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