[2595stk Lager]
- Delnummer:
- IPU80R1K4CEBKMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 800V 3.9A TO251-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - DIAC, SIDAC, Transistorer - IGBT-er - moduler, Transistorer - programmerbar enhet, Transistorer - FET, MOSFET - En, Dioder - likerettere - singel, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - RF and Dioder - RF ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPU80R1K4CEBKMA1 electronic components. IPU80R1K4CEBKMA1 can be shipped within 24 hours after order. If you have any demands for IPU80R1K4CEBKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPU80R1K4CEBKMA1 Produktegenskaper
Delnummer :
IPU80R1K4CEBKMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 800V 3.9A TO251-3
Serie :
CoolMOS™
Delstatus :
Discontinued at Digi-Key
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1.4 Ohm @ 2.3A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 240µA
Gate Lading (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
570pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
63W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO251-3
Pakke / sak :
TO-251-3 Short Leads, IPak, TO-251AA
Siste nytt
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