IRFB4229PBF Priser (USD) [21647stk Lager]
- 1 pcs$1.71873
- 10 pcs$1.53584
- 100 pcs$1.25930
- 500 pcs$0.96744
- 1,000 pcs$0.81592
- Delnummer:
- IRFB4229PBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 250V 46A TO-220AB.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Tyristorer - SCR-er - moduler, Transistorer - IGBT-er - singel, Transistorer - FET, MOSFET - Arrays, Transistorer - Bipolar (BJT) - Singel, Transistorer - FET, MOSFET - En, Power Driver-moduler and Transistorer - programmerbar enhet ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFB4229PBF electronic components. IRFB4229PBF can be shipped within 24 hours after order. If you have any demands for IRFB4229PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB4229PBF Produktegenskaper
Delnummer :
IRFB4229PBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 250V 46A TO-220AB
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
250V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
46 mOhm @ 26A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4560pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
330W (Tc)
Driftstemperatur :
-40°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220AB
Pakke / sak :
TO-220-3
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