Delnummer :
SIHB20N50E-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 500V 19A TO-263
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
500V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
184 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
92nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1640pF @ 100V
Effektdissipasjon (maks) :
179W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D²PAK (TO-263)
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB