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- Delnummer:
- IPD50R800CEBTMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N CH 500V 5A TO252.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - spesialformål, Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - RF, Transistorer - FET, MOSFET - RF, Tyristorer - DIAC, SIDAC, Transistorer - IGBT-er - Arrays, Dioder - likerettere - matriser and Dioder - Variabel kapasitet (Varicaps, Varactors) ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPD50R800CEBTMA1 electronic components. IPD50R800CEBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD50R800CEBTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD50R800CEBTMA1 Produktegenskaper
Delnummer :
IPD50R800CEBTMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N CH 500V 5A TO252
Serie :
CoolMOS™
Delstatus :
Discontinued at Digi-Key
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
500V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
13V
Rds On (Max) @ Id, vgs :
800 mOhm @ 1.5A, 13V
Vgs (th) (Max) @ Id :
3.5V @ 130µA
Gate Lading (Qg) (Max) @ Vgs :
12.4nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
280pF @ 100V
FET-funksjon :
Super Junction
Effektdissipasjon (maks) :
40W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO252-3
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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