NVMFS5C612NLAFT1G Priser (USD) [71157stk Lager]
- 1 pcs$0.71465
- 1,500 pcs$0.71109
- Delnummer:
- NVMFS5C612NLAFT1G
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 60V 38A 250A 5DFN.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - programmerbar enhet, Dioder - Zener - Singel, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - FET, MOSFET - Arrays, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - Bipolar (BJT) - RF, Transistorer - spesialformål and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in ON Semiconductor NVMFS5C612NLAFT1G electronic components. NVMFS5C612NLAFT1G can be shipped within 24 hours after order. If you have any demands for NVMFS5C612NLAFT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVMFS5C612NLAFT1G Produktegenskaper
Delnummer :
NVMFS5C612NLAFT1G
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 60V 38A 250A 5DFN
Serie :
Automotive, AEC-Q101
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
38A (Ta), 250A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
1.36 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
91nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6660pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
3.8W (Ta), 167W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
5-DFN (5x6) (8-SOFL)
Pakke / sak :
8-PowerTDFN, 5 Leads
Siste nytt
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