UGB8JT-E3/81 Priser (USD) [97852stk Lager]
- 1 pcs$0.39959
- 800 pcs$0.37427
- 1,600 pcs$0.27950
- 2,400 pcs$0.26087
- 5,600 pcs$0.24845
- Delnummer:
- UGB8JT-E3/81
- Produsent:
- Vishay Semiconductor Diodes Division
- Detaljert beskrivelse:
- DIODE GEN PURP 600V 8A TO263AB. Rectifiers 600 Volt 8.0A 25ns 100 Amp IFSM
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Transistorer - FET, MOSFET - Arrays, Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Tyristorer - TRIAC, Transistorer - programmerbar enhet, Tyristorer - SCR-er - moduler and Dioder - Zener - Arrays ...
- Konkurransefordel:
- We specialize in Vishay Semiconductor Diodes Division UGB8JT-E3/81 electronic components. UGB8JT-E3/81 can be shipped within 24 hours after order. If you have any demands for UGB8JT-E3/81, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
UGB8JT-E3/81 Produktegenskaper
Delnummer :
UGB8JT-E3/81
Produsent :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 600V 8A TO263AB
Serie :
-
Delstatus :
Active
Diodetype :
Standard
Spenning - DC Reverse (Vr) (Max) :
600V
Nåværende - Gjennomsnittlig rettet (Io) :
8A
Spenning - Fremover (Vf) (Maks) @ Hvis :
1.75V @ 8A
Hastighet :
Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) :
50ns
Nåværende - Omvendt lekkasje @ Vr :
30µA @ 600V
Capacitance @ Vr, F :
-
Monteringstype :
Surface Mount
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Leverandørenhetspakke :
TO-263AB
Driftstemperatur - veikryss :
-55°C ~ 150°C
Siste nytt
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