BSC0910NDIATMA1 Priser (USD) [95992stk Lager]
- 1 pcs$0.40734
- 5,000 pcs$0.39102
- Delnummer:
- BSC0910NDIATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET 2N-CH 25V 16A/31A TISON8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - Arrays, Tyristorer - SCR-er - moduler, Transistorer - FET, MOSFET - En, Power Driver-moduler, Transistorer - programmerbar enhet, Transistorer - IGBT-er - singel and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
- Konkurransefordel:
- We specialize in Infineon Technologies BSC0910NDIATMA1 electronic components. BSC0910NDIATMA1 can be shipped within 24 hours after order. If you have any demands for BSC0910NDIATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC0910NDIATMA1 Produktegenskaper
Delnummer :
BSC0910NDIATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET 2N-CH 25V 16A/31A TISON8
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
2 N-Channel (Dual) Asymmetrical
FET-funksjon :
Logic Level Gate, 4.5V Drive
Drenering til kildespenning (Vdss) :
25V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
11A, 31A
Rds On (Max) @ Id, vgs :
4.6 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
6.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 12V
Kraft - Maks :
1W
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-PowerTDFN
Leverandørenhetspakke :
PG-TISON-8
Siste nytt
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