IRFD020PBF Priser (USD) [54371stk Lager]
- 1 pcs$0.64387
- 10 pcs$0.57154
- 100 pcs$0.45184
- 500 pcs$0.33147
- 1,000 pcs$0.26168
- Delnummer:
- IRFD020PBF
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 50V 2.4A 4-DIP.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - moduler, Transistorer - FET, MOSFET - En, Transistorer - IGBT-er - singel, Transistorer - IGBT-er - Arrays, Transistorer - JFET-er, Dioder - likerettere - singel, Power Driver-moduler and Tyristorer - SCR-er - moduler ...
- Konkurransefordel:
- We specialize in Vishay Siliconix IRFD020PBF electronic components. IRFD020PBF can be shipped within 24 hours after order. If you have any demands for IRFD020PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFD020PBF Produktegenskaper
Delnummer :
IRFD020PBF
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 50V 2.4A 4-DIP
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
50V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
100 mOhm @ 1.4A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
24nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
1W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
4-DIP, Hexdip, HVMDIP
Pakke / sak :
4-DIP (0.300", 7.62mm)
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