Vishay Semiconductor Diodes Division - FESB16ATHE3/81

KEY Part #: K6456052

FESB16ATHE3/81 Priser (USD) [68452stk Lager]

  • 1 pcs$0.57121
  • 800 pcs$0.53010

Delnummer:
FESB16ATHE3/81
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
DIODE GEN PURP 50V 16A TO263AB. Rectifiers 16 Amp 50 Volt 35ns 250 Amp IFSM
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - programmerbar enhet, Dioder - Zener - Singel, Dioder - Bridge likerettere, Dioder - RF, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor and Dioder - likerettere - singel ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division FESB16ATHE3/81 electronic components. FESB16ATHE3/81 can be shipped within 24 hours after order. If you have any demands for FESB16ATHE3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FESB16ATHE3/81 Produktegenskaper

Delnummer : FESB16ATHE3/81
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 50V 16A TO263AB
Serie : -
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 50V
Nåværende - Gjennomsnittlig rettet (Io) : 16A
Spenning - Fremover (Vf) (Maks) @ Hvis : 975mV @ 16A
Hastighet : Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 35ns
Nåværende - Omvendt lekkasje @ Vr : 10µA @ 50V
Capacitance @ Vr, F : 175pF @ 4V, 1MHz
Monteringstype : Surface Mount
Pakke / sak : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Leverandørenhetspakke : TO-263AB
Driftstemperatur - veikryss : -65°C ~ 150°C

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