Taiwan Semiconductor Corporation - 1N5821HB0G

KEY Part #: K6429926

1N5821HB0G Priser (USD) [736098stk Lager]

  • 1 pcs$0.05025

Delnummer:
1N5821HB0G
Produsent:
Taiwan Semiconductor Corporation
Detaljert beskrivelse:
DIODE SCHOTTKY 30V 3A DO201AD.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - Bipolar (BJT) - Arrays, Transistorer - IGBT-er - moduler, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - IGBT-er - Arrays, Tyristorer - TRIAC and Dioder - RF ...
Konkurransefordel:
We specialize in Taiwan Semiconductor Corporation 1N5821HB0G electronic components. 1N5821HB0G can be shipped within 24 hours after order. If you have any demands for 1N5821HB0G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5821HB0G Produktegenskaper

Delnummer : 1N5821HB0G
Produsent : Taiwan Semiconductor Corporation
Beskrivelse : DIODE SCHOTTKY 30V 3A DO201AD
Serie : Automotive, AEC-Q101
Delstatus : Active
Diodetype : Schottky
Spenning - DC Reverse (Vr) (Max) : 30V
Nåværende - Gjennomsnittlig rettet (Io) : 3A
Spenning - Fremover (Vf) (Maks) @ Hvis : 500mV @ 3A
Hastighet : Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : -
Nåværende - Omvendt lekkasje @ Vr : 500µA @ 30V
Capacitance @ Vr, F : 200pF @ 4V, 1MHz
Monteringstype : Through Hole
Pakke / sak : DO-201AD, Axial
Leverandørenhetspakke : DO-201AD
Driftstemperatur - veikryss : -55°C ~ 125°C

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