IPD180N10N3GATMA1 Priser (USD) [194329stk Lager]
- 1 pcs$0.19033
- 2,500 pcs$0.18272
- Delnummer:
- IPD180N10N3GATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MV POWER MOS.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Arrays, Transistorer - JFET-er, Transistorer - IGBT-er - singel, Transistorer - spesialformål, Dioder - RF, Transistorer - Bipolar (BJT) - Arrays, Transistorer - programmerbar enhet and Tyristorer - DIAC, SIDAC ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPD180N10N3GATMA1 electronic components. IPD180N10N3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPD180N10N3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD180N10N3GATMA1 Produktegenskaper
Delnummer :
IPD180N10N3GATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MV POWER MOS
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, vgs :
18 mOhm @ 33A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 33µA
Gate Lading (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
71W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO252-3
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
Siste nytt
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