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- Delnummer:
- IRF7831PBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 30V 21A 8-SOIC.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Transistorer - Bipolar (BJT) - RF, Transistorer - Bipolar (BJT) - Arrays, Dioder - Bridge likerettere, Dioder - likerettere - matriser, Transistorer - IGBT-er - singel, Transistorer - FET, MOSFET - Arrays and Power Driver-moduler ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF7831PBF electronic components. IRF7831PBF can be shipped within 24 hours after order. If you have any demands for IRF7831PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7831PBF Produktegenskaper
Delnummer :
IRF7831PBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 30V 21A 8-SOIC
Serie :
HEXFET®
Delstatus :
Discontinued at Digi-Key
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
3.6 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
60nC @ 4.5V
Vgs (maks) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
6240pF @ 15V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.5W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-SO
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
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