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- Delnummer:
- VS-GT400TH120N
- Produsent:
- Vishay Semiconductor Diodes Division
- Detaljert beskrivelse:
- IGBT 1200V 600A 2119W DIAP.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Power Driver-moduler, Transistorer - FET, MOSFET - Arrays, Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - JFET-er, Transistorer - Bipolar (BJT) - Arrays and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
- Konkurransefordel:
- We specialize in Vishay Semiconductor Diodes Division VS-GT400TH120N electronic components. VS-GT400TH120N can be shipped within 24 hours after order. If you have any demands for VS-GT400TH120N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GT400TH120N Produktegenskaper
Delnummer :
VS-GT400TH120N
Produsent :
Vishay Semiconductor Diodes Division
Beskrivelse :
IGBT 1200V 600A 2119W DIAP
Serie :
-
Delstatus :
Obsolete
IGBT-type :
Trench
konfigurasjon :
Half Bridge
Spenning - Samlebrenningens nedbrytning (maks) :
1200V
Nåværende - Samler (Ic) (Maks) :
600A
Kraft - Maks :
2119W
Vce (på) (Max) @ Vge, Ic :
2.15V @ 15V, 400A
Nåværende - Collector Cutoff (Max) :
5mA
Input Capacitance (Cies) @ Vce :
28.8nF @ 25V
Input :
Standard
NTC Thermistor :
No
Driftstemperatur :
150°C (TJ)
Monteringstype :
Chassis Mount
Pakke / sak :
Double INT-A-PAK (3 + 8)
Leverandørenhetspakke :
Double INT-A-PAK
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